ALD and PVD Workflow Systems

Combining HPC™ methodology with site-isolated deposition, our Tempus™ ALD/PVD workflows are being applied to materials screening and process integration development for applications involving metal or dielectric deposition. These systems address various technological challenges in both the solar and semiconductor device manufacturing processes.

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Tempus A-30—HPC Atomic Layer Deposition

This system is a 300mm chamber capable of site isolation of both metal and oxide films across four quadrants of the wafer, with easy variation of film thickness and/or composition within each quadrant. Applications include initial precursor screening and characterization, as well as advanced materials discovery.

Download Tempus A-30—HPC Atomic Layer Deposition data sheet (PDF) >>

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Tempus P-30—HPC Physical Vapor Deposition

This system is a 200mm and 300mm chamber with the ability to use up to four sources and three optional deposition methods on a vast range of conductors and dielectrics for memory and logic applications. 

Download Tempus P-30—HPC Physical Vapor Deposition data sheet (PDF) >>

Tempus AP-30

The AP-30 series can be configured for specific applications with multiple A-30 or P-30 chambers and common support modules such as degas and pre-clean. This combined functionality enables both ALD and PVD for rapid screening of thin-film metal alloys, dielectrics and multilayer stacks. Processes may be scaled to facilitate high-volume manufacturing.

Download Tempus AP-30 data sheet (PDF) >>