Dr. Nishi, a professor of electrical engineering at Stanford University, directs the Stanford Nanofabrication Facility and serves as research director at the Center for Integrated Systems. His research interests include MOS device physics and technology, nanoscale devices, three-dimensional integrated circuits and non-volatile memory. Before joining Stanford, he served as senior vice president and director of R&D at Texas Instruments Inc. Prior to that, Dr. Nishi directed Hewlett-Packard’s (HP) Center for ICBD R&D, which developed HP’s high-performance CMOS technology for PA-RISC chips. He has published more than 220 papers and conference presentations, co-authored/edited 12 books, and he holds more than 50 patents in the United States and Japan. Dr. Nishi is an IEEE Fellow and has received that organization’s Jack Morton Award and Robert Noyce Medal. He received a B.S. degree in materials science and engineering from Waseda University, and a Ph.D. degree in electronics engineering from the University of Tokyo.